Inductively Coupled Plasma Etcher with 9.5 Inch Electrode

Reactive Ion Etch System

BatchTop VII

Single Chamber PECVD. Mixed Frequency Deposition (MFD) Both High Frequency (13.56 MHz) and Low Frequency (50-460 kHz) RF power delivered both electrodes.

Shuttle Load Lock System

Combination PECVD and Dual Plasma Etch/Reactive Ion Etch Processing Systems

Reactive Ion Etch / PECVD system mounted in glovebox with an intregrated air purfier O2 and H20 sensors on board. Both top and bottom electrodes can be powered sequentially.

Dual Plasma Etch and Reactive Ion Etch Processing Systems System consists of a process chamber, upper electrode (with gas feed), and substrate electrode.